The most advanced lithographic patterning technology used in the semiconductor industry employs extreme ultraviolet (EUV) light at 13.5 nm. The focus topic, “Advances in EUV Lithography,” will cover recent developments, opportunities, and challenges in EUV technology, as well as emerging patterning technologies, related metrology, and the environmental impact of lithography. Special emphasis will be placed on future EUV technologies, such as High NA (numerical aperture) EUV—a next-generation EUV technology. High-NA EUV lithography promises significant advancements in chip manufacturing but necessitates overcoming several challenges related to depth of focus, mask technology, resist performance, and cost of ownership. Ongoing research and development efforts across the entire ecosystem are critical for addressing these challenges and realizing the full potential of High NA EUV technology. Some of these challenges require innovation and optimization of new patterning materials, such as the development of new photoresist platforms with high resolution, low line-edge roughness (LER), and high sensitivity; exploration of new underlayer materials to improve EUV exposure dose and throughput; and research into new film materials to support resist thinning, feature scaling, and pattern transfer.
EUV-MoM: Advances in EUV Lithography II
- Emily Gallagher, imec, “Climate-Aware Semiconductor Manufacturing: the Pivotal Role of Lithography”
- Mike Lercel, ASML, “Pushing the Limits of High-Volume Manufacturing with EUV Litthography”
- Christopher Penny, IBM Research, “High NA EUV Challenges and Opportunities”
EUV-MoA: Advances in EUV Lithography II
- Robert Brainard, University at Albany, “EUV Resists: Chemistry, Mechanisms and Challenges”
- Eric Liu, Tokyo Electron America, Inc., “Outlook for Future EUV Patterning Opportunities and Challenges”
- Chris Mack, FRACTILIA, “Closing the Stochastics Resolution Gap”
- Cheng Wang, Lawrence Berkeley National Laboratory, “CD-RSoXS: Latent Image Metrology for Source–Mask–Resist Co-Optimization in High-NA EUV Lithography”
EUV-ThP: Advances in EUV Lithography Poster Session