The Atomic Scale Processing Mini-Symposium is aimed at providing a unique forum to expand the scope of atomic layer deposition (ALD) and atomic layer etching (ALE) processes towards understanding the fundamentals needed to achieve true atomic scale precision and the application of such processing in various areas of interest to the broader AVS community. The emphasis will be on synergistic efforts across multiple AVS divisions and groups to generate area-selective processes as well as novel characterization methods to advance the field of processing at the atomic scale. We are excited to offer several sessions in collaboration with the Plasma Science & Technology Division, the Thin Film Division, the Spectroscopic Ellipsometry Technical Group, as well as the Electronic Materials and Photonics Division, focusing on area-selective deposition, atomic layer process chemistry & surface characterization, and finally both thermal and plasma-based atomic layer etching and atomic layer deposition.
AP+EL+EM+PS+TF-TuM: Area Selective Processing and Patterning
- Masanaga Fukasawa, National Institute of Advanced Industrial Science and Technology (AIST), Japan, “Atomic Layer Etching for Advanced Logic Devices”
AP1+EL+MS+PS+TF-TuA: Advanced Atomic Scale Processing through Modeling and Simulation
- Angel Yanguas-Gil, Argonne National Laboratory, “Design and performance of AI agents interfacing with atomic layer deposition tools”
AP2+EL+PS+TF-TuA: Advancing X-Ray Photoelectron Spectroscopy to enable Atomic Scale Processing
- Christophe Detavernier, Ghent University, Belgium, “In vacuo XPS for Studying ALD Processes”
- Joachim Schnadt, Lund University, Sweden, “Understanding the Chemical Reaction Mechanisms of Oxide, Nitride and Metal ALD: Insights from Operando X-Ray Photoelectron Spectroscopy”
AP+EL+PS+TF-WeM: Thermal and Plasma Enhanced Atomic Layer Etching
- François Boulard, CEA-LETI, France, “Cyclic dielectric etching challenges for next-generation FDSOI logic and quantum devices”
- Kazunori Shinoda, Hitachi High-Tech Corporation, Japan, “Isotropic Atomic Layer Etching via Thermal-Cyclic Processing: Broad Material Capabilities with a Focus on Work–Function Metal Films”
AP+2D+EL+EM+PS+TF-WeA: Atomic Scale Processing to Enable 2D Materials
- Miika Mattinen, University of Helsinki, Finland, “Chemistry (and Some Physics) of Atomic Layer Deposition of Two-Dimensional Metal Dichalcogenides”
- Yevgeny Raitses, Princeton Plasma Physics Laboratory, “Low Temperature Magnetized Plasmas for Processing of Two-Dimensional Materials”
AP+EL+MS+PS+TF-ThM: Advancing Spectroscopic Ellipsometry and Other in-Situ Techniques to Enable Atomic Scale Processing
- Parag Banerjee, University of Central Florida, “Building Intelligence Through in Situ Techniques for Atomic Layer Processes”
- Gottlieb Oehrlein, University of Maryland College Park, “Real-Time Insights into Plasma-Based Atomic-Scale Processing via Ellipsometry”
- Eva Schubert, University of Nebraska – Lincoln, “Atomic Processes in Surface-Limited ALD Growth Studied by Real-Time Spectroscopic Ellipsometry”
AP+EL+MS+PS+TF-ThA: Advancing Atomic Scale Processing Through Novel Sources and Pulsing Methods
AP+EL+PS+TF-ThP: Atomic Scale Processing Mini-Symposium Poster Session
AP1+EL+PS+TF-FrM: Thermal and Plasma-Enhanced ALD
- Necmi Biyikli, University of Connecticut, “Analyzing Plasma-Enhanced ALD of III-Nitrides via Experimental and Theoretical Studies”
AP2+EL+PS+TF-FrM: Enabling Atomic Scale Processing (ALD/ALE) by leveraging new Precursors and Surface Reactions