The Plasma Science & Technology Division (PSTD) program highlights the latest advances in plasma science, ranging from fundamental studies of plasma physics and chemistry to plasma-matter interactions and new applications for etch processing. Our global community spans academia, national facilities, and industry and strives to engineer the future in plasma research applied to sustainable semiconductor processing, as well as atmospheric pressure plasmas and chemical and energy conversion, novel materials synthesis and catalysis. Novel areas such as atomic-scale processing, advanced packaging including photonics, AR/VR, AI/ML, power and RF devices, patterning, isotropic etch and thermal etch techniques are also of interest.
PS+AP-MoM: Plasma Processes for Advanced Interconnects
- Scott Allen, IBM Research Division, Albany, NY, “Interconnect for 7A and Beyond”
- Miyako Matsui, Hitachi Ltd., Japan, “Roughness Generation Mechanisms in Ru Etching Using O₂/Cl₂-Based Plasma for Advanced Interconnects”
- Jean-Philippe Soulie, IMEC, Belgium, “Epitaxial conductors to replace Cu in advanced interconnect metallization”
PS1-MoA: Plasma Diagnostics
- James Ellis, Oxford Instruments Plasma Technology, UK, “Plasma Diagnostics for Industry: Restrictions, Reluctance, and Reward”
- Dren Qerimi, University of Illinois, “Young Investigator Awardee Talk: Spatially Resolved Probes for the Measurement of Hydrogen, Oxygen, Nitrogen, Chlorine, and Fluorine Radicals”
PS2-MoA: Plasma Catalysis and Synthesis
- Tomohiro Nozaki, Institute of Science Tokyo, Japan, “Electrifying C1 Chemistry via Nonthermal Plasma Catalysis”
PS1-TuM: High Aspect Ratio and Cryogenic Etching I
- Sung-Il Cho, Samsung Electronics Co., Republic of Korea, “Challenges in Etching High Aspect Ratio Patterns for Memory Devices”
PS2-TuM: High Aspect Ratio and Cryogenic Etching II
- Hiroyuki Fukumizu, Kioxia Corporation, Japan, “Investigation of Surface Reactions of SiO2 and SiN Films Under Cryogenic Etching Process via in-Line/Situ Analysis”
- Shih-Nan Hsiao, Nagoya University, Japan, “Plasma-Material Interactions in Cryogenic Hydrogen-Fluoride Plasma Etching”
PS1-TuA: Atmospheric and Liquid Plasmas
PS2+EUV-TuA: Plasma Processes for Feature Scaling
- Yannick Feurprier, TEL Europe, Belgium, “Advanced Logic Pitch Scaling in the High NA EUV Era”
- Ali Haider, Lam Research Corp., “Dry Resist Patterning Solutions for High-NA EUV Lithography”
PS1-WeM: Plasmas for 3D Integration
- Violeta Georgieva, IMEC, Belgium, “Challenges in Plasma Etching for 3D Interconnect Technology”
PS2-WeM: Plasma Applications in Packaging and Wafer Bonding
- Brittany Hedrick, Tokyo Electron America, “Etch Opportunities in Advanced Packaging, Silicon, and Optical Photonics”
PS1-WeA: Machine Learning for Plasma Processes
- Fatima Jenina Arellano, ULVAC, Inc., Japan, “Machine Learning-Assisted Plasma Process Monitoring and Optimization”
- Kallol Bera, Applied Materials, Inc., “Machine Learning Applications and Challenges in Low Temperature Plasma Systems”
PS2-WeA: Low Global Warming Potential and Sustainability in Plasma Processing
PS1-ThM: Advanced Ion and Reactant Control I
- Steven Shannon, North Carolina State University, “Plasma Prize Talk: Drilling Really Tiny Holes in Glass: The Role of Ion Energy Control in Nano-Fabrication”
PS2-ThM: Advanced Ion and Reactant Control II
- Hirotaka Toyoda, Nagoya University, Japan, “Energy-Resolved Angular Distribution of Ions Impinging on Biased Electrode in Dual-Frequency Capacitively-Coupled Ar Plasma”
PS-ThA: Simulation for Plasma Processes
- SeungMin Lee, Samsung Electronics, Republic of Korea, “A Multi-Scale Simulation Methodology for Recipe Design in Semiconductor Etch Processes”
PS-FrM: Novel Chemistries and Materials in Plasma Processing
- Mark Kawaguchi, LAM Research, “Low Energy Remote Plasma and Non-Plasma Methods for Highly Selective Etching of Advanced Nanodevices”
PS-ThP: Plasma Science and Technology Poster Session