The most advanced lithographic patterning technology used in the semiconductor industry employs extreme ultraviolet (EUV) light at 13.5 nm. The focus topic, “Advances in EUV Lithography,” will cover recent developments, opportunities, and challenges in EUV technology, as well as emerging patterning technologies, related metrology, and the environmental impact of lithography. Special emphasis will be placed on future EUV technologies, such as High NA (numerical aperture) EUV—a next-generation EUV technology. High-NA EUV lithography promises significant advancements in chip manufacturing but necessitates overcoming several challenges related to depth of focus, mask technology, resist performance, and cost of ownership. Ongoing research and development efforts across the entire ecosystem are critical for addressing these challenges and realizing the full potential of High-NA EUV technology. Some of these challenges require innovation and optimization of new patterning materials, such as the development of new photoresist platforms with high resolution, low line-edge roughness (LER), and high sensitivity; exploration of new underlayer materials to improve EUV exposure dose and throughput; and research into new film materials to support resist thinning, feature scaling, and pattern transfer.
Areas of Interest: EUV is seeking abstracts in the following areas:
- Advances in Lithography Equipment, Process Optimization, and EUV Masks
- Novel Patterning Technologies
- EUV Photoresist Fundamental and Mechanisms
- Advances in Film Characterization, Metrology, and Inspection
- Sustainability, Technology, and Environmental Impact of Lithography
EUV1: Advances in EUV Lithography Oral Session
Invited Speakers:
Robert Brainard, CNSE, University at Albany, “EUV Resist Chemistry, Mechanism, and Challenges”
Emily Gallagher, IMEC, Belgium, “Environmental Impact of Lithography”
Eric Liu, TEL Technology Center, America, LLC, “Outlook for Future Patterning Opportunities”
Chris Penny, IBM, “High Na EUV Challenges and Opportunities”
Mark Van de Kerkhof, ASML, Netherlands, “EUV Lithography: Past, Present, and Future”
Cheng Wang, LBNL, “Characterization of Latent Image of Photoresist via Critical Dimension Resonant Soft X-ray Scattering”
EUV2: Advances in EUV Lithography Poster Session